发明名称 Midair semiconductor device and manufacturing method of the same
摘要 A midair semiconductor device includes a Si substrate provided with an element part on its front surface side. An opening is formed in the Si substrate in such a manner that a rear surface of the element part is exposed. The opening is provided below the element part while penetrating through the Si substrate. The front surface side of the Si substrate is sealed with a first cap part such as a Si cap such that a portion above the element part is brought into a midair state. A second cap part such as a Si cap is bonded to the rear surface side of the Si substrate so that the opening is sealed.
申请公布号 US7476567(B2) 申请公布日期 2009.01.13
申请号 US20050281517 申请日期 2005.11.18
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO TAKAO
分类号 H01L23/48 主分类号 H01L23/48
代理机构 代理人
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