发明名称 Delay-locked loop circuit of a semiconductor device and method of controlling the same
摘要 A delay-locked loop (DLL) circuit includes a standby signal generating circuit, a front stage circuit, and a back stage circuit. The standby signal generating circuit generates a first standby signal and a second standby signal in response to an active signal, a crock enable signal, a first column address strobe (CAS) latency signal, and a second CAS latency signal. The front stage circuit compares the phase of an external clock signal and the phase of a feedback signal and delays the external clock signal based on the phase difference between the external clock signal and the feedback signal to generate a first clock signal. The back stage circuit executes interpolation and duty-cycle correction on the first clock signal.
申请公布号 US7477715(B2) 申请公布日期 2009.01.13
申请号 US20070623925 申请日期 2007.01.17
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 BYUN YOUNG-YONG;LEE DONG-JIN;LEE HI-CHOON
分类号 H03D3/24 主分类号 H03D3/24
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