发明名称 High input voltage tolerant input/output circuit being free from electrostatic discharge voltage
摘要 A high input voltage tolerant input/output circuit includes a pad, a clamping circuit clamping a high voltage applied to the pad to generate a clamping signal, and a buffer unit transmitting an input signal received by the pad to an internal circuit and outputting data of the internal circuit to the pad in response to the clamping signal. The buffer unit includes stacked NMOS transistors. When a high voltage higher than a power supply voltage is applied to the pad, the stacked NMOS transistors are turned on, and the stacked NMOS transistors are prevented from being destroyed by the high voltage. When an electrostatic discharge voltage is applied to the pad, the stacked NMOS transistors are turned off, and the stacked NMOS transistors are prevented from being destroyed by electrostatic discharge current.
申请公布号 US7477496(B2) 申请公布日期 2009.01.13
申请号 US20060354303 申请日期 2006.02.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KWON BONG-JAE
分类号 H02H9/00;H02H1/00 主分类号 H02H9/00
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