发明名称 Light emitting device
摘要 An object of the invention is to provide a light emitting device in which the variation in emission spectrum depending on an angle for seeing a surface through which light is emitted is reduced. The light emitting device of the invention includes a first insulating layer formed over a substrate, a second insulating layer formed over the first insulating layer, and a semiconductor layer formed over the second insulating layer. A gate insulating layer is formed to cover the second insulating layer and the semiconductor layer. A gate electrode is formed over the gate insulating layer. A first interlayer insulating layer is formed to cover the gate insulating layer and the gate electrode. An opening is formed through the first interlayer insulating layer, the gate insulating layer and the second insulating layer. A second interlayer insulating layer is formed to cover the first insulating layer and the opening. A light emitting element is formed over the opening.
申请公布号 US7476908(B2) 申请公布日期 2009.01.13
申请号 US20050121070 申请日期 2005.05.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI SHUNPEI;OHNUMA HIDETO;ANZAI AYA;SAKAKURA MASAYUKI;GODO HIROMICHI
分类号 H01L29/207;H01L27/15;H01L27/32;H01L33/00;H05B33/12 主分类号 H01L29/207
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