| 摘要 |
<p>Provided are a film forming apparatus to be used in a semiconductor manufacturing process and a method for manufacturing a barrier film to be used for a semiconductor. At the time of alternately flowing a metal material gas and a reaction gas, a backflow preventing gas and an auxiliary gas are flowed, then, the reaction gas and the auxiliary gas are flowed on the flow of the backflow preventing gas to bring the reaction gas and the auxiliary gas into contact with a catalyst material, and a radical is generated.A metal material gas is not brought into contact with the catalyst material and the catalyst material is not deteriorated. A reaction chamber (36) may be supplied with the radical through a through hole (14) by arranging a shower plate (12) between a radical generating chamber (35) and the reaction chamber (36). Thus, a barrier film having a low resistance and excellent coverage is formed.</p> |
