| 摘要 |
A method is disclosed for fabricating a silicon nitride regions in silicon carbide. The method includes the steps of implanting a sufficient dose and energy of nitrogen ions into a silicon carbide substrate maintained at a temperature above about 350° C. to produce an as-implanted layer of a silicon nitride composition in the silicon carbide, and annealing the as-implanted layer to form a silicon nitride composition. In some embodiments, the formed region of silicon nitride provides an insulating layer. In some embodiments, the silicon nitride region is buried under a surface layer of silicon carbide. Methods of separating silicon carbide by implantation and lift-off are additionally disclosed.
|
