发明名称 |
Techniques for reducing effects of photoresist outgassing |
摘要 |
Techniques for reducing effects of photoresist outgassing are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for reducing effects of photoresist outgassing in an ion implanter. The apparatus may comprise a drift tube located between an end-station and an upstream beamline component. The apparatus may also comprise a first variable aperture between the drift tube and the end-station. The apparatus may further comprise a second variable aperture between the drift tube and the upstream beamline component. The first variable aperture and the second variable aperture can be adjusted to facilitate differential pumping.
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申请公布号 |
US7476878(B2) |
申请公布日期 |
2009.01.13 |
申请号 |
US20060567522 |
申请日期 |
2006.12.06 |
申请人 |
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. |
发明人 |
LOW RUSSELL J.;ENGLAND JONATHAN GERALD;KRAUSE STEPHEN E.;HERMANSON ERIC D. |
分类号 |
H01J37/317 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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