| 摘要 |
A semiconductor device is provided to realize a stable level shifting even if high power voltage is applied to the device by adding the small circuit to the conventional level shifter circuit. A level shifter circuit(LSC1) is operated when a first power source(VDD1) and the second power source(VDD2) is off. A current is generated from the current generating circuit(CG) when the fist power source is off and the second power source is on, and it is applied to the first power source which is OFF-state, a current generating circuit, a node(ND4), a bias circuit(BC), and parasitic diode(PD1). The voltage of node is higher than that of the first power source, and it is higher than that of the threshold voltage. The n-channel MOS transistor(N2) is conducted and the operation of the level shifter(LS) is stabilized according to the voltage-state of the node(ND2,ND3). The level shifter is steadily operated when the first power source is on.
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