VERTICALLY STRUCTURED LIGHT EMITTING DIODE AND MANUFACTURING METHOD THEREOF

摘要

The vertical type semiconductor light emitting device and manufacturing method thereof are provided to protect the light emitting structure from the laser beam irradiated as the light emitting structure form the oxide film pattern on the sapphire substrate by forming the oxide pattern on the sapphire substrate. The oxide film pattern(113) is formed on the substrate(111). The light emitting structure(115) is formed on the substrate in which the oxide film pattern is formed. The etching process is performed to the outer boundary region of the light emitting structure to the substrate surface. The insulating layer(117) is formed. The first electrode(119) is formed on the light emitting structure and insulating layer. The conductivity bearing substrate(121) is formed on the first electrode.