发明名称 PHOTOELECTRIC CONVERSION DEVICE AND ELECTRONIC DEVICE PROVIDED WITH THE PHOTOELECTRIC CONVERSION DEVICE
摘要 <p>A photoelectric conversion device and electronic device provided with the photoelectric conversion device is provided to increase the dynamic range of an output voltage by amplifying current passing the photoelectric conversion device. A photoelectric conversion device(101) generates photoelectric current according to the strength of the light. The current mirror circuit(105) is composed of the 1p channel type transistor(105A) and 2p channel type transistor(105B). A first terminal of the photoelectric conversion element is electrically connected with the low potential side terminal of the DC power supply(103). A second terminal of the photoelectric conversion element is electrically connected to the gate terminal of the drain of the 1p channel type transistor and gate terminal and 2p channel type transistor. A source terminal of the 2p channel type transistor and 1p channel type transistor is respectively electrically connected with the high-potential terminal of the DC power supply. A drain of the 2p channel type transistor is electrically connected to the drain of the n channel type transistor(106) and gate terminal and voltage level detection circuit(102). A source terminal of the n channel type transistor is electrically connected to the second terminal of the DC power supply.</p>
申请公布号 KR20090004509(A) 申请公布日期 2009.01.12
申请号 KR20080055056 申请日期 2008.06.12
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YANAGISAWA MAKOTO;KOYAMA JUN
分类号 G05F3/26;H01L29/786;H01L31/10 主分类号 G05F3/26
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