| 摘要 |
<p>The non-volatile memory device and manufacturing method thereof are provided to reduce the interference between the floating gates by forming the floating gate of U shape. The floating gate(14) is formed on the substrate(10) with 'U' pattern. One side of the floating gate is recessed. The buffer layer (13A) fills up the recess portion of the floating gate. The tunneling insulating layer(11) is formed between the floating gate and the substrate. The dielectric film(15) is laminated on the floating gate. The recessed portion of the floating gate can be comprised in order to face one direction. The buffer layer can be the oxide film or the nitride film.</p> |
