发明名称 REDUCED SIGNAL LEVEL SUPPORT FOR MEMORY DEVICES
摘要 A reduced signal level support for memory devices is provided to supply a voltage reference by using one or more additional electrical contact point. A system(100) comprises a host(110A) and a memory device(120A), a host controls data transmission from/to the memory device. The host comprises the first and the second driver(112A,112B) and the first and the second calibration circuit(114A,114B). The first driver is combined with the command/ address(CA) interconnection(132). The second driver is combined with the DQ interconnection, and the memory device partly provides the system main memory to the system at least. The memory device comprises a receiver(122A,122B) receiving signal from the host.
申请公布号 KR20090004591(A) 申请公布日期 2009.01.12
申请号 KR20080061748 申请日期 2008.06.27
申请人 INTEL CORP. 发明人 ZUMKEHR JOHN;CHANDLER JAMES;SMITH JEFFREY
分类号 G11C11/4096;G11C11/4074 主分类号 G11C11/4096
代理机构 代理人
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