METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The method of manufacturing the semiconductor device is provided to prevent collapse of pattern by forming the space at the sidewall of the pattern. The bitline pattern(106) regularly is formed in the semiconductor substrate(100). The spacer layer having the double-film structure of the first insulating layer(108) and the second insulating layer(110) are formed. The interlayer insulating film is formed on the semiconductor substrate in order to cover the same pattern. The interlayer insulating film formed in the space between the same patterns is etched and the contact hole is formed. The first insulating layer is formed with the thickness of 10~400Å. The first insulating layer is formed with the film including nitrogen. The second insulating layer is formed with the thickness of 50~500Å. The second insulating layer is formed with the film having the oxygen.