| 摘要 |
This invention provides a highly linear and very small-pitch copper wiring polyimide film. The copper wiring polyimide film is produced by a process for producing a copper wiring polyimide film having a 20 to 45 mum-pitch copper wiring part by a semi-additive method using a copper foil stacked polyimide film (1) with a carrier. The production process comprises (a) the step of providing a copper foil stacked film comprising a copper foil (4b) having a film-side surface roughness Rz of not more than 1.0 mum and a thickness in the range of 0.5 mum to 2 mum on a surface of a polyimide film (2), (b) the step of forming a plating resist pattern layer (17) in which a 20 to 45 mum-pitch wiring pattern can be formed on the upper surface of the copper foil, (c) the step of conducting copper plating (10) on the copper foil part exposed from the resist, (d) the step of removing the plating resist, and (e) the step of removing the copper foil exposed on the plating resist-removed part to expose a polyimide film face (8). |
