| 摘要 |
A semiconductor light emitting device and a manufacturing method thereof are provided to increase the high light coupling efficiency by reflecting the light from the semiconductor radiation part. A semiconductor light emitting device(1) comprises a first conductivity type semiconductor layer(2), a second conductivity type semiconductor layer(3), and a semiconductor radiation part(5) having a light-emitting layer(4) which is interposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer. A first conductive electrode(6) is connected to the first conductivity type semiconductor layer and a second conductive electrode(7) is connected to the second conductivity type semiconductor layer. An insulating layer(11b) is formed on the second conductivity type semiconductor layer apart from the second conductive electrode.
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