| 摘要 |
The method of manufacturing the semiconductor device is provided to prevent the seam from being exposed outside by lowering the conductive film removal ratio in the CMP process. The interlayer insulating film(32) having the contact hole(33) for exposing the constant area of substrate is formed on the substrate(30). The conductive film is formed in the front surface to fill the contact hole. The contact plug(34A) is formed in the contact hole by performing the first polishing to prevent the expose of the seam. The secondary polishing is performed to remove the dishing generated in the contact plug. The slurry having the oxidizer of 1~2% is used in the first polishing. The slurry having the lower removal ratio than the interlayer insulating film to the conductive film is used in the secondary polishing.
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