发明名称 AUTOMATIC TRANSFER SWITCHING CIRCUIT USING SEMICONDUCTOR
摘要 The automatic transfer switch circuit is provided to prevent the momentary power failure by causing the fast switching speed by the insulated gate bipolar transistor. A plurality of IGBTs(300) and the gate controller(400) are formed between the power supply(100) and the load(200). The IGBT functions as the switching element performing the switching action of the power supply. A plurality of IGBTs is controlled with the gate controller. A part of a plurality of IGBTs is connected in the forward direction. The other IGBT is connected in the reverse direction.
申请公布号 KR20090003804(A) 申请公布日期 2009.01.12
申请号 KR20070066782 申请日期 2007.07.03
申请人 LEE, YU GYEONG;CHOL, GI YEONG;JO, HA HYEONG;GWON, WON GI;HWANG, CHUL HEE;KIM, JONG SOO 发明人 LEE, YU GYEONG;HWANG, CHUL HEE;CHOL, GI YEONG;KIM, JONG SOO;JO, HA HYEONG;GWON, WON GI
分类号 H01L29/70 主分类号 H01L29/70
代理机构 代理人
主权项
地址