AUTOMATIC TRANSFER SWITCHING CIRCUIT USING SEMICONDUCTOR
摘要
The automatic transfer switch circuit is provided to prevent the momentary power failure by causing the fast switching speed by the insulated gate bipolar transistor. A plurality of IGBTs(300) and the gate controller(400) are formed between the power supply(100) and the load(200). The IGBT functions as the switching element performing the switching action of the power supply. A plurality of IGBTs is controlled with the gate controller. A part of a plurality of IGBTs is connected in the forward direction. The other IGBT is connected in the reverse direction.
申请公布号
KR20090003804(A)
申请公布日期
2009.01.12
申请号
KR20070066782
申请日期
2007.07.03
申请人
LEE, YU GYEONG;CHOL, GI YEONG;JO, HA HYEONG;GWON, WON GI;HWANG, CHUL HEE;KIM, JONG SOO
发明人
LEE, YU GYEONG;HWANG, CHUL HEE;CHOL, GI YEONG;KIM, JONG SOO;JO, HA HYEONG;GWON, WON GI