| 摘要 |
The CVD process chamber system is provided to improve uniformity of wafer thickness by improving the structure of the shower head within the chamber and to reduce the generation of particle. The CVD process chamber(30) is comprised of the shower head(40), the RF shield(50), and the module cover(11) and the heater block(14). The processing chamber system includes The process gas nozzle(31a), and in, and outer side gas injection ports(33a,32a). The shower head(40) is controlled by the fastening means(35) to be connected to the module cover. The process gas nozzle is formed in the center region of the shower head. The hole of helix is formed to spread process gas onto the wafer(13). The nitrogen gas is spread to the edge portion of wafer. .
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