发明名称 |
N-WELL BARRIER PIXELS FOR IMPROVED PROTECTION OF DARK REFERENCE COLUMNS AND ROWS FROM BLOOMING AND CROSSTALK |
摘要 |
The barrier region for isolating one or more dark regions of the pixel array of an image sensor from the active array or from the peripheral circuitry includes N-well pixel isolation region. The N-well pixel isolation region includes at least one N-well implant or at least one N-well stripe. The N-well pixel isolation region is adjacent the pixel cells which comprise the dark region. The addition of the N-well in the barrier region improves the isolation properties of the barrier region by reducing or eliminating the neutral P-EPI region in the barrier pixel area below the N-well isolation region.
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申请公布号 |
KR20090005169(A) |
申请公布日期 |
2009.01.12 |
申请号 |
KR20087027596 |
申请日期 |
2008.11.11 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MAURITZSON RICHARD A.;PATRICK INNA |
分类号 |
H01L27/146;H01L27/148 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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