| 摘要 |
A method of annealing a substrate that has a trench containing a dielectric material formed on a silicon nitride layer between the dielectric material and the substrate, where the method includes annealing the substrate at a first temperature of about 800°C or more in a first atmosphere comprising an oxygen containing gas, and annealing the substrate at a second temperature of about 800°C to about 1400°C in a second atmosphere lacking oxygen.
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