| 发明名称 |
Semiconductor device with reduced electromigration |
| 摘要 |
A high reliability semiconductor device is provided which can prevent electromigration due to the deposition of metal ions originating from wires. The device includes: a flexible wiring board 11 including a base film 1 and multiple wires 9; a semiconductor chip 5 mounted to the flexible wiring board 11; and a sealing resin 6 disposed between the flexible wiring board 11 and the semiconductor chip 5 so as to at least partially in contact with the wires 9. The sealing resin 6 contains a metal ion binder mixed thereto.
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| 申请公布号 |
US7474008(B2) |
申请公布日期 |
2009.01.06 |
| 申请号 |
US20050133379 |
申请日期 |
2005.05.20 |
| 申请人 |
SHARP KABUSHIKI KAISHA |
发明人 |
FUKUTA KAZUHIKO;TOYOSAWA KENJI;KIDOGUCHI TAKASHI |
| 分类号 |
H01L23/28;H01L23/29;H01L21/56;H01L21/60;H01L23/12;H01L23/14;H01L23/31;H01L23/48;H01L23/498;H05K1/00;H05K3/28;H05K3/30 |
主分类号 |
H01L23/28 |
| 代理机构 |
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