| 发明名称 |
Memory element with improved contacts |
| 摘要 |
A phase-change memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contacts having a sidewall electrically coupled to the memory material.
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| 申请公布号 |
US7473574(B2) |
申请公布日期 |
2009.01.06 |
| 申请号 |
US20060394433 |
申请日期 |
2006.04.01 |
| 申请人 |
OVONYX, INC. |
发明人 |
KOSTYLEV SERGEY A.;OVSHINSKY STANFORD R.;CZUBATYJ WOLODYMYR;KLERSY PATRICK;PASHMAKOV BOIL |
| 分类号 |
H01L21/00;G11C11/56;H01L27/24;H01L45/00 |
主分类号 |
H01L21/00 |
| 代理机构 |
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