发明名称 |
Phase shifting mask for manufacturing semiconductor device and method of fabricating the same |
摘要 |
A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance. |
申请公布号 |
US7473497(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20050084327 |
申请日期 |
2005.03.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM IN-SUNG;LEE JUNG-HYEON;JUNG SUNG-GON |
分类号 |
G03F1/00;G03F1/08;G03F1/14;G03F1/29;G03F1/36;G03F1/54;G03F1/68;G03F1/70;H01L21/027 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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