发明名称 |
Method of manufacturing carbon nanotube semiconductor device |
摘要 |
Provided is a method of controlling an alignment direction of CNTs in manufacturing a carbon nanotube semiconductor device using the CNTs for a channel region formed between a source electrode and a drain electrode. In manufacturing a carbon nanotube semiconductor device including a gate electrode, a gate insulating film, a source electrode, a drain electrode, a CNT layer formed between the source electrode and the drain electrode in contact therewith, the method conducts: dropping a CNT solution obtained by dispersing CNTs in a solvent onto a region between the source electrode and the drain electrode while an alternating current voltage is applied between the source electrode and the drain electrode; and removing the solvent to control an orientation of the CNTs in the CNT layer.
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申请公布号 |
US7473651(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20060413178 |
申请日期 |
2006.04.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
MORIYA KOJI;YAMASHITA AKIO |
分类号 |
C01B31/02;H01L21/469;B82B3/00;H01L21/314;H01L21/316;H01L21/318;H01L29/06;H01L29/76;H01L29/786;H01L51/00;H01L51/30 |
主分类号 |
C01B31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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