发明名称 Method for growing silicon single crystal
摘要 A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.
申请公布号 US7473314(B2) 申请公布日期 2009.01.06
申请号 US20060390366 申请日期 2006.03.28
申请人 SUMCO CORPORATION 发明人 INAMI SHUICHI;TAKASE NOBUMITSU;KOGURE YASUHIRO;HAMADA KEN;NAKAMURA TSUYOSHI
分类号 C30B15/20 主分类号 C30B15/20
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