发明名称 |
Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby |
摘要 |
The invention relates to a transistor that includes an ultra-thin body epitaxial layer that forms an embedded junction with a channel that has a length dictated by an undercut under the gate stack for the transistor. The invention also relates to a process of forming the transistor and to a system that incorporates the transistor.
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申请公布号 |
US7473947(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20020194506 |
申请日期 |
2002.07.12 |
申请人 |
INTEL CORPORATION |
发明人 |
MURTHY ANAND;DOYLE BRIAN;KAVALIEROS JACK;CHAU ROBERT |
分类号 |
H01L21/00;H01L21/336;H01L29/417;H01L29/786 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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