发明名称 Crystal growth crucible
摘要 A crystal growth crucible made of boron nitride includes a cylindrical tip portion for accommodating a seed crystal, and a cylindrical straight-body portion for growing a crystal, which is formed above the tip portion and has a diameter larger than that of the tip portion. Thickness T1 of the tip portion and thickness T2 of the straight-body portion satisfy a condition of 0.1 mm<=T2<T1<=5 mm, and inside diameter D2 and length L2 of the straight-body portion satisfy conditions of 100 mm<D2 and 2<L2/D2<5.
申请公布号 US7473317(B2) 申请公布日期 2009.01.06
申请号 US20060884836 申请日期 2006.03.09
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 HAGI YOSHIAKI
分类号 C30B35/00 主分类号 C30B35/00
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