发明名称 Flash memory, program circuit and program method thereof
摘要 A program circuit and method for a flash memory is provided. This invention utilizes a constant current to program the flash memory and modulate the threshold voltage of the flash memory. While a program circuit programming the flash memory, the present invention determines whether the threshold voltage reaches the anticipated value according to the variation of the drain voltage of the flash memory. Hence, the present invention can accurately modulate the threshold voltage of the programmed flash memory and shorten the programming time.
申请公布号 US7474563(B2) 申请公布日期 2009.01.06
申请号 US20060564077 申请日期 2006.11.28
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 HSU JER-HAO
分类号 G11C16/04 主分类号 G11C16/04
代理机构 代理人
主权项
地址