发明名称 Semiconductor device and testing method thereof
摘要 A semiconductor device according to the present invention has a liquid crystal driver circuit, and when gray-scale voltage thereof is tested, the gray-scale voltage (Vx) generated in a gray-scale voltage generator circuit provided therein is compared with reference voltage (e.g., Vx+DeltaV) generated for testing the gray-scale voltage and the test result is output as binarized voltage from external terminals of the semiconductor device. This can speed up the gray-scale voltage test even in the case of higher gray scale in the liquid crystal driver circuit or increased number of output terminals of the semiconductor device. Therefore, it becomes possible to reduce the time and cost required for the test.
申请公布号 US7474290(B2) 申请公布日期 2009.01.06
申请号 US20040981715 申请日期 2004.11.05
申请人 RENESAS TECHNOLOGY CORP. 发明人 MAKUUCHI MASAMI;CHUJO NORIO;IMAGAWA KENGO;ORIHASHI RITSURO;ARAI YOSHITOMO
分类号 G01R31/316;G09G3/36;G01R31/28;G02F1/133;G09G3/00;G09G3/20;H01L21/822;H01L27/04 主分类号 G01R31/316
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