发明名称 |
Specimen current mapper |
摘要 |
A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.
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申请公布号 |
US7473911(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20030695620 |
申请日期 |
2003.10.27 |
申请人 |
APPLIED MATERIALS, ISRAEL, LTD. |
发明人 |
KADYSHEVITCH ALEXANDER;SHEMESH DROR;BRAMI YANIV;SHUR DMITRY |
分类号 |
H01J49/44;H01L21/00;H01L21/66;H01L23/544 |
主分类号 |
H01J49/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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