发明名称 Specimen current mapper
摘要 A method for process monitoring includes receiving a sample having a first layer that is at least partly conductive and a second layer formed over the first layer, following production of contact openings in the second layer. A beam of charged particles is directed along a beam axis that deviates substantially in angle from a normal to a surface of the sample, so as to irradiate one or more of the contact openings in each of a plurality of locations distributed over at least a region of the sample. A specimen current flowing through the first layer is measured in response to irradiation of the one or more of the contact openings at each of the plurality of locations. A map of at least the region of the sample is created, indicating the specimen current measured in response to the irradiation at the plurality of the locations.
申请公布号 US7473911(B2) 申请公布日期 2009.01.06
申请号 US20030695620 申请日期 2003.10.27
申请人 APPLIED MATERIALS, ISRAEL, LTD. 发明人 KADYSHEVITCH ALEXANDER;SHEMESH DROR;BRAMI YANIV;SHUR DMITRY
分类号 H01J49/44;H01L21/00;H01L21/66;H01L23/544 主分类号 H01J49/44
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