发明名称 |
Method of fabricating a semiconductor device |
摘要 |
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
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申请公布号 |
US7473592(B2) |
申请公布日期 |
2009.01.06 |
申请号 |
US20070926573 |
申请日期 |
2007.10.29 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;OHTANI HISASHI |
分类号 |
H01L21/30;H01L27/12;H01L21/02;H01L21/336;H01L21/762;H01L21/84;H01L29/786 |
主分类号 |
H01L21/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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