| 摘要 |
A magnetic memory cell that includes at least two magnetoresistive memory bits is presented. The memory cell is capable of storing at least two logical states. The first logical state occurs when the bits share the same orientation, such as a parallel orientation or an antiparallel orientation. The second logical state occurs when the bits have opposite orientations. In the second logical state one of the bits has a parallel orientation and the other bit has an antiparallel orientation.
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