发明名称 Mechanism for read-only memory built-in self-test
摘要 In one embodiment, a method for on-die read only memory (ROM) built-in self-test (BIST) is disclosed. The method comprises testing odd word line entries of a read-only memory (ROM) array by performing two passes through the ROM array to test each odd word line entry for static and delay faults, testing even word line entries of the ROM array by performing two passes through the ROM array to test each even word line entry for static and delay faults, and testing each entry of the ROM array for static faults masked by dynamic faults by performing two passes through the ROM array. Other embodiments are also described.
申请公布号 US7475314(B2) 申请公布日期 2009.01.06
申请号 US20060450722 申请日期 2006.06.08
申请人 INTEL CORPORATION 发明人 CHHABRA PAWAN;THOMAS TESSIL
分类号 G01R31/28 主分类号 G01R31/28
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