| 摘要 |
A method includes forming a plurality of functional features on a semiconductor layer in a first region. A non-functional feature corresponding to the functional feature is formed adjacent at least one of the functional features disposed on a periphery of the region. A stress-inducing layer is formed over at least a portion of the functional features and the non-functional feature. A device includes a semiconductor layer, a first dummy gate electrode, and a stress-inducing layer. The plurality of transistor gate electrodes is formed above the semiconductor layer. The plurality includes at least a first end gate electrode, a second end gate electrode, and at least one interior gate electrode. The first dummy gate electrode is disposed proximate the first end gate electrode. The stress-inducing layer is disposed over at least a portion of the plurality of transistor gate electrodes and the first dummy gate electrode.
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