发明名称 Integrierte Halbleiterschaltungsbaueinheit, Herstellungsverfahren dafür und Montageverfahren dafür
摘要 A semiconductor integrated circuit device includes a semiconductor substrate having a first surface and including electrodes on the first surface of the semiconductor substrate; a glass coating film covering the first surface of the semiconductor substrate except the electrodes; an external electrode on the electrode in electrical contact with the electrode and having a polished external surface; and a cured resin layer on the glass coating film forming a barrier against intrusion of moisture and ions into the semiconductor substrate, and having the same area as the semiconductor substrate, and a polished external surface.
申请公布号 DE4338432(B4) 申请公布日期 2009.01.02
申请号 DE19934338432 申请日期 1993.11.10
申请人 MITSUBISHI DENKI K.K. 发明人 SHINOMIYA, KOHJI
分类号 H01L21/304;H01L23/50;H01L21/301;H01L21/56;H01L21/58;H01L21/60;H01L21/66;H01L23/31;H01L23/36;H01L25/065 主分类号 H01L21/304
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