| 摘要 |
Methods of fabricating low temperature semiconductor thin film switching devices are described. A method includes: forming one or more metal lines on a substrate; forming a conductive contact to a said metal line thru an insulator layer above the metal lines; forming a thin film N-type and P-type conducting transistor pair having: a contiguous amorphous silicon first geometry above the insulator layer, said first geometry including an N-type transistor region, a P-type transistor region, and a common region between the transistor regions fully covering the contact; and a gate dielectric layer above the first geometry; and a contiguous amorphous silicon second geometry above the gate dielectric layer including transistor regions that cross over the first geometry transistor regions; forming a silicide of first and second amorphous silicon geometry surfaces with a deposited metallic material, the silicided surfaces including: said second geometry surface; and said first geometry surface not covered by the second geometry, which includes the surface of the region covering the contact; depositing an insulating material; and forming conductive contacts and top metal interconnects.
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