| 摘要 |
The semiconductor device includes a capacitor 36 formed over a semiconductor substrate 10 and including a lower electrode 30, a dielectric film 32 and an upper electrode 34; a first insulation film 58 formed above the capacitor 36; a first interconnection 88a formed over the first insulation film 68; a second insulation film 90 formed over the first insulation film 68 and over the first interconnection 88a; an electrode pad 102 formed over the second insulation film 90: and a monolithic conductor 100 buried in the second insulation film 90 immediately below the electrode pad 102 and buried through the second insulation film 90 down to a part of at least the first insulation layer 68.
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