| 发明名称 |
METHOD OF MANUFACTURING AN INSULATING FILM CONTAINING HAFNIUM |
| 摘要 |
A stacked film has an insulating film containing hafnium formed above a silicon layer and a polysilicon layer formed on the insulating film. The stacked film is heated in an atmosphere containing oxygen and nitrogen and having the total pressure approximately equal to a partial pressure of the nitrogen.
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| 申请公布号 |
US2009004886(A1) |
申请公布日期 |
2009.01.01 |
| 申请号 |
US20080146835 |
申请日期 |
2008.06.26 |
| 申请人 |
OSHIMA MASAHARU;TAKAHASHI HARUHIKO;USUDA KOJI;LIU ZIYUAN;GUO-LIN LIU;IKEDA KAZUTO;YOSHIMARU MASAKI |
发明人 |
OSHIMA MASAHARU;TAKAHASHI HARUHIKO;USUDA KOJI;LIU ZIYUAN;GUO-LIN LIU;IKEDA KAZUTO;YOSHIMARU MASAKI |
| 分类号 |
H01L21/469 |
主分类号 |
H01L21/469 |
| 代理机构 |
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