发明名称 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 A method for fabricating a capacitor includes forming a sacrificial layer having a plurality of trenches on an upper portion of a substrate, forming storage nodes in the trenches, exposing upper portions of the storage nodes by removing a portion of the sacrificial layer, forming supporters to support the exposed upper portions of the storage nodes, removing the sacrificial layer under the supporters, and removing the supporters.
申请公布号 US2009004808(A1) 申请公布日期 2009.01.01
申请号 US20070965698 申请日期 2007.12.27
申请人 HYNIX SEMICONDUCTOR INC. 发明人 LEE KEE-JEUNG;ROH JAE-SUNG;YEOM SEUNG-JIN;SONG HAN-SANG;KIL DEOK-SIN;KIM YOUNG-DAE;KIM JIN-HYOCK;DO KWAN-WOO
分类号 H01L21/20 主分类号 H01L21/20
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