| 摘要 |
A high-density fine line structure mainly includes: two packaged semiconductor devices installed on a circuit layer and a power/ground layer formed therebetween, to realize the objective of high-density and ground connection. On an outer circuit, the part, which is not covered by a solder mask, can be made into a pad for electrically connecting with one of the semiconductor devices. The other semiconductor device may be installed on the fine line circuit layer. The fine line circuit layer, which is exposed, is to be a tin ball pad where a tin ball is filled. Electroplating rather than the etching method is used for forming the fine line circuit layer, and a carrier and a metal barrier layer, which are needed during or at the end of the manufacturing process, are removed to increase the wiring density for realizing the object of high-density.
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