Vertical Pin or Nip Photodiode and Method for the Production which is Compatible with a Conventional Cmos-Process

摘要

The invention relates to a fast photodiode and to a method for the production thereof in CMOS technology. The integrated PIN photodiode, which is formed or can be formed by CMOS technology, consists of an anode corresponding to a highly doped p-type substrate with a specific electric resistance of less than 50 mOhm*cm, a lightly p-doped l-region which is adjacent to the anode, and an n-type cathode which corresponds to the doping in the n-well region. The lightly doped l-region has a doping concentration of less than 1014 cm-3 and has a thickness of between 8 and 25 mum. The cathode region is completely embedded in the very lightly doped l-region. A distance from the edge of the cathode region to a highly doped adjacent region is in the range of 2.5 mum to 10 mum.