| 摘要 |
In order to reduce a thermal stress applied by a metal cap to a semiconductor chip: a semiconductor chip (2) is bonded to a flat portion (11) of a metal cap (1); side wall portions of the metal cap (1) serve as external connection terminals (13); and a slit (7) is formed in the metal cap (1) so as to cross the semiconductor chip (2), so a bonding region between the semiconductor chip (2) and the metal cap (1) is divided into small bonding regions to reduce thermal stresses applied to the respective bonding regions. Therefore, peeling can be prevented in respective bonding regions, whereby a small-size semiconductor device in which the semiconductor chip is bonded to the metal cap with improved bonding reliability is obtained.
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