Improvements in or relating to semiconductor devices and methods of making them

摘要

980,442. Semi-conductor devices. WESTERN ELECTRIC CO. Inc. Jan. 27, 1961 [March 18, 1960], No. 3224/61. Heading H1K. In a semi-conductor device such as a transistor or a diode, a semi-conductor body is mounted on and in ohmic connection with a support member comprising a conducting base material with a Cu layer applied to at least a portion thereof and an Au layer applied over the Cu layer, the Au comprising from 44 to 58% or from 72 to 84% of the combined weight of the layers, the rest being Cu. This arrangement is said to inhibit the injection of unwanted carriers into the body. As shown, a header for a PNP transistor is made of " Kovar " (Registered Trade Mark) with coatings of Cu 17 and Au 18 on all surfaces except those adjacent sealing glass 21. The weight of Cu is 25 mg./in.2 in one example and 80 mg./in.2 in another, the weight of Au being 80 mg./in.2 in each case. A Ge body 11 comprises an Sb-diffused base region 28, an Al alloy emitter region 29, and a collector region 30 which is bonded to the header by a Cu-Au-Ge alloy 32 formed by heating to 350‹ C. Emitter and base connections 12, 13, alloyed to their respective regions by Au-Ag strip 31, are connected to leads 14, 15 which are glass-sealed through the header; a third, collector, lead (not shown) is in electrical connection with the header. A cap (not shown) of " Kovar " is flange bonded to the header, the enclosure thus formed being evacuated, filled with oxygen, and sealed. Semi-conductor materials other than Ge may be used.