发明名称 |
Semiconductor device including semiconductor evaluation element, and evaluation method using semiconductor device |
摘要 |
Provided are a semiconductor evaluation element capable of analytically estimating the amount of DC variation of a MOS transistor which is caused by formed contacts, and an evaluation circuit and an evaluation method using the semiconductor evaluation element. The semiconductor evaluation element such as a MOS transistor includes: a gate; diffusion layers; measurement contacts; and floating contacts. The diffusion layers are formed on both sides of the gate and serve as a source and a drain. The measurement contacts are provided in positions apart from the gate on the diffusion layers. The floating contacts are provided between the gate and the measurement contacts to connect electrically isolated metal layers with the diffusion layers.
|
申请公布号 |
US2009001368(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20080213664 |
申请日期 |
2008.06.23 |
申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
NARUTA YASUHISA |
分类号 |
G01R31/26;H01L23/58 |
主分类号 |
G01R31/26 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|