MEMORY CELL THAT EMPLOYS A SELECTIVELY DEPOSITED REVERSIBLE RESISTANCE-SWITCHING ELEMENT AND METHODS OF FORMING THE SAME

摘要

In some aspects, a method of forming a memory cell is provided that includes (1) forming a first conductor above a substrate; (2) forming a diode above the first conductor; (3) forming a reversible resistance-switching element above the first conductor using a selective deposition process; and (4) forming a second conductor above the diode and the reversible resistance-switching element. Numerous other aspects are provided.