发明名称 |
Inductively coupled dual zone processing chamber with single planar antenna |
摘要 |
A dual zone plasma processing chamber is provided. The plasma processing chamber includes a first substrate support having a first support surface adapted to support a first substrate within the processing chamber and a second substrate support having a second support surface adapted to support a second substrate within the processing chamber. One or more gas sources in fluid communication with one or more gas distribution members supply process gas to a first zone adjacent to the first substrate support and a second zone adjacent to the second substrate support. A radio-frequency (RF) antenna adapted to inductively couple RF energy into the interior of the processing chamber and energize the process gas into a plasma state in the first and second zones. The antenna is located between the first substrate support and the second substrate support.
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申请公布号 |
US2009004874(A1) |
申请公布日期 |
2009.01.01 |
申请号 |
US20070819898 |
申请日期 |
2007.06.29 |
申请人 |
LAM RESEARCH CORPORATION |
发明人 |
SANT SANKET P. |
分类号 |
H01L21/302;C23C16/00;H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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