发明名称 High density NOR flash array architecture
摘要 In one embodiment of the invention, a memory includes wordline jogs and adjacent spacers. Spacers from different wordlines may contact one another on either side of a drain contact and consequently isolate and self-align the contact in the horizontal and vertical directions.
申请公布号 US2009003060(A1) 申请公布日期 2009.01.01
申请号 US20070823518 申请日期 2007.06.28
申请人 FASTOW RICHARD 发明人 FASTOW RICHARD
分类号 G11C11/34;G11C16/04;H01L21/82 主分类号 G11C11/34
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