| 摘要 |
A thin film electro-luminescent device (TFEL) includes an active layer made of a direct bandgap semiconductor material, e.g. zinc oxide, doped with exciton binding centers, such as aluminum, in small amounts, e.g. 0.001 at % to 30.0 at %. The exciton binding centers prevent free excitons, created by impact ionization, from diffusing toward and recombining at native defect centers. To provide a columnar structure, a polycrystalline seed layer is deposited first to provide a template, followed by the deposition of an overlying layer forming columns in accordance with the template.
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