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发明名称
可变电阻非挥发性记忆体单元以及制造其之方法
摘要
本发明揭示一种制造积体电路记忆体单元之方法及积体电路记忆体单元。可藉由将一欧姆层形成于一导电结构之一上表面上且沿一绝缘层中之一开口之一侧壁的至少一部分而延伸远离该结构来制造一积体电路记忆体单元。将一电极层形成于该欧姆层上。将一可变电阻率材料形成于该绝缘层上且电连接至该电极层。
申请公布号
TW200901376
申请公布日期
2009.01.01
申请号
TW097103145
申请日期
2008.01.28
申请人
三星电子股份有限公司
发明人
吴圭焕;姜信在;朴仁善;林炫锡;林洛铉;李炫锡
分类号
H01L21/8239(2006.01);H01L27/24(2006.01)
主分类号
H01L21/8239(2006.01)
代理机构
代理人
陈长文;林嘉兴
主权项
地址
南韩
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