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发明名称
整合多重闸极氧化物厚度的半导体晶片及其制造方法
摘要
一种方法,包括形成一材料于一基板上,以及图案化材料以移除部份材料,并露出基板之一下层部份。该方法进一步包括进行一氧化步骤以形成一氧化层在基板之露出部份上及在材料与基板之一界面。一种电路,包含一非关键元件,以及一氧化层形成之关键元件之一部份。一高K介电材料系形成于一基板上,如电路中之关键元件的一部份。提供一氧基界面于高K介电材料和一下层基板之间。第二种方法系形成一氮化物或氮氧化物做为第一材料。
申请公布号
TW200901321
申请公布日期
2009.01.01
申请号
TW097102308
申请日期
2008.01.22
申请人
万国商业机器公司
发明人
安东尼I 周;芮妮T 蒙;苏黎西 娜莱思哈
分类号
H01L21/316(2006.01);H01L21/8234(2006.01);H01L27/088(2006.01);H01L29/78(2006.01)
主分类号
H01L21/316(2006.01)
代理机构
代理人
蔡玉玲
主权项
地址
美国
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